Product Code : CE-AlN-5N-SP
Aluminum nitride (AlN) is a new type of ceramic material with excellent comprehensive properties. Aluminum Nitrides (AlN) combine high thermal conductivity with strong electrical resistance, making AlN an excellent solution for many electronic applications. Unlike most electrically insulative materials — which are often also thermally insulative — AlN allows electrical systems to dissipate heat quickly in order to maintain maximum efficiency. Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required, which makes it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has electrical insulation properties and a coefficient of thermal expansion that closely matches that of Silicon wafer material, making it a useful material for electronics applications where high temperatures and heat dissipation are often a problem. The series of excellent characteristics are considered to be the ideal materials for highly concentrated semiconductor substrates and electronic device packaging.
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An aluminum nitride (AlN) sheet is a thin, flat material composed primarily of aluminum nitride, a ceramic compound that has gained attention for its exceptional thermal conductivity, electrical insulation properties, and wide range of applications in various industries.
Thermal Conductivity: Aluminum nitride exhibits high thermal conductivity, making it an effective material for applications where heat dissipation is crucial, such as in electronic components.
Electrical Insulation: It is an excellent electrical insulator, which makes it suitable for applications that require electrical isolation along with thermal management.
Dielectric Properties: Aluminum nitride has low dielectric loss, allowing it to be used in high-frequency applications such as in microwave and radio frequency devices.
Chemical Stability: It is chemically stable and resistant to many common chemicals, which contributes to its suitability in various environments.
High Melting Point: Aluminum nitride has a high melting point, which enables its use in high-temperature applications.
Low Thermal Expansion: It has a relatively low coefficient of thermal expansion, which helps to minimize thermal stresses in devices that experience temperature variations.
Synonyms
Aluminum nitride; Azanylidynealumane; Nitridoalumane; Nitriloalumane; Nitridoaluminum
Aluminum Nitride (AlN) sheet Specification
Dimensions
Per your request or drawing
We can customized as required
Properties（Theoretical）
Aluminum Nitride Properties
| Unit | ||
| Density | g/cm3 | 2.9-3.32 |
| Purity | 99%, 99.7% | |
| Monoisotopic Mass | 40.9846 | |
| Exact Mass | 40.9846 | |
| Melting Point | °C | 2200 |
| Boiling Point | °C (dec.) | 2517 |
| Electrical Resistivity | Ω-m | 10 to 12 10x |
| Poisson's Ratio | 0.21 to 0.31 | |
| Specific Heat | J/kg-K | 780 |
| Modulus of Elasticity | GPa | 320 |
| racture Toughness KIC | Mpa m1/2 | 2.5 |
| Compressive Strength | MPa | 3000 |
| Flexural Strength @ 25°C | MPa | 350 |
| Hardness | GPa | 10 |
| Thermal Conductivity @ 25°C | W/mK | 170 |
| CTE 25°C ➞ 400°C | 10-6/K | 4.5 |
| Maximum Temperature (Inert) | °C | 1200 |
| Maximum Temperature (Inert) | 1 MHz | 8.8 |
| Dielectric Loss | 1 MHz | 5x10-4 |
| Dielectric Voltage | kV/mm | 15 |
| Volume Resistivity @ 25°C | ohm-cm | >1013 |
Hot Pressed Aluminum Nitiride
| Property | Units | Value |
| Flexural Strength, MOR (20 °C) | MPa | 300 - 460 |
| Fracture Toughness, KIc | MPa m1/2 | 2.75 - 6.0 |
| Thermal Conductivity (20 °C) | W/m K | 80 - 100 |
| Coefficient of Thermal Expansion | 1 x 10-6/°C | 3.3 - 5.5 |
| Maximum Use Temperature | °C | 800 |
| Dielectric Strength (6.35mm) | ac-kV/mm | 16.0 - 19.7 |
| Dielectric Loss (tan δ) | 1MHz, 25 °C | 1 x 10-4 to 5 x 10-4 |
| Volume Resistivity (25°C) | Ω-cm | 1013 to 1014 |
Direct Sintered Aluminum Nitiride
| Property | Units | Value |
| Flexural Strength, MOR (20 °C) | MPa | 260 - 375 |
| Fracture Toughness, KIc | MPa m1/2 | 3.0 - 3.6 |
| Thermal Conductivity (20 °C) | W/m K | 80 - 205 |
| Coefficient of Thermal Expansion | 1 x 10-6/°C | 5.2 - 5.6 |
| Maximum Use Temperature | °C | - |
| Dielectric Strength (6.35mm) | ac-kV/mm | 15 - 25 |
| Dielectric Loss (tan δ) | 1MHz, 25 °C | 0.0002 - 0.0077 |
| Volume Resistivity (25°C) | Ω-cm | 1011 to 1014 |
Over five times the thermal conductance of Alumina
Enables high performing devices to function faster and better in smaller devices
No toxic issues of beryllia
Good plasma resistance
Excellent thermal shock performance
Aluminum Nitride Machining
Aluminum Nitride can be machined in green, biscuit, or fully dense states. While in the green or biscuit form, it can be machined relatively easily into complex geometries. However, the sintering process that is required to fully densify the material causes the Aluminum Nitride body to shrink approximately 20%. This shrinkage means that it is impossible to hold very tight tolerances when machining AlN pre-sintering. In order to achieve very tight tolerances, fully sintered material must be machined/ground with diamond tools. In this process a very precise diamond coated tool/wheel is used to abrade away the material until the desired form is created. Due to the inherent toughness and hardness of the material, this can be a time consuming and costly process AlN commonly comes in substrates up to 1 mm thick, which can easily be laser cut. It can also come in thicker forms, however, it can be difficult/costly to manufacture in small quantities if the part requires custom material or significant machining.
•Heat sink substrate, LED package substrate, a semiconductor substrate, thin-film circuit •substrate, power resistor substrate
•Opto-electronics
•Dielectric layers in optical storage media
•Electronic substrates, chip carriers where high thermal conductivity is essential；
•Military applications
• High power electrical insulators
• Power electronics
• Heat spreaders
• Heat sinks
• Water cooled heatsinks
• Laser heatsink power rectifiers
• Laser components
• Aerospace, power electronics
AlN ceramic products are mainly used in high-density hybrid circuits, microwave power devices, semiconductor power devices, power electronic devices, optoelectronic components, semiconductor refrigeration and other products as high-performance substrate materials and packaging materials.
Packing of Aluminum Nitride Sheet
Standard Packing:
Sealed bags in carton boxes. Special package is available on request.
As a ceramic material, AlN is quite fragile in a lot of cases. The AlN sheet are usually held in plastic bags by vacuum, and protected with heavy foam.
ATTs’ AlN sheet is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
| Linear Formula | AlN |
| MDL Number | MFCD00003429 |
| EC No. | 246-140-8 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 90455 |
| IUPAC Name | azanylidynealumane |
| SMILES | [Al]#N |
| InchI Identifier | InChI=1S/Al.N |
| InchI Key | PIGFYZPCRLYGLF-UHFFFAOYSA-N |
| CAS # | 24304-00-5 |
