Product Code :
Indirect heating of gas is an important way, in the sintering , melting, heat treatment of metallic materials, and glass industries. Compared with direct combustion heating, gas indirect heating can greatly improve the thermal efficiency and reduce the emission of no and other harmful gases.
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Indirect heating of gas is an important way, in the sintering , melting, heat treatment of metallic materials, and glass industries. Compared with direct combustion heating, gas indirect heating can greatly improve the thermal efficiency and reduce the emission of no and other harmful gases. At the same time, the stability of temperature is improved to ensure the control of atmosphere in the furnace. At the same time, in many industrial heating processes, the workpiece and combustion environment are required to be isolated. All of these need to be heated by indirect radiation. The traditional indirect heating mainly uses metal or its alloy as the radiation heating tube of the heating system, but up to now the upper limit of the maximum operating temperature of various metal radiation tubes is only 1000℃ , which can not meet the higher heating temperature required by many processes. At present, The main problem lies in the reliability problem of longterm use in higher temperature and more complex media. the pressureless sintered SiC radiant tube can be used stably for a long time in various corrosive media at a high temperature of 1650℃.
Synonyms
methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic
Dimensions
Per your request or drawing
We can customized as required
The physical properties of pressureless sintered silicon carbide ceramics products
Physical properties | UNIT | SSIC |
(Composition:SiC) | vol % | ≥ 98 |
Density 20°C | g/cm³ | >3.10 |
Open Porosity | Vol % | 0 |
(Hardness) 45N | R45N | 93 |
(Hardness) HV1 | kg/mm² | 2350 |
(Flexural Strength 20°C) | MPa | 320-400 |
(Flexural Strength1300°C) | MPa | 360-410 |
Coefficient of thermal expansion | 10-6K-1 | 4 |
(Thermal Conductivity 20°C ) | Wm -1K-1 | 116 |
(Thermal Conductivity 1200°C | Wm -1K-1 | 35 |
(Modulus of Elasticity @ RT ) | GPa | 410 |
Thermal shock resistance ) | Excellent | |
(Max. Service Temp (air) ) | °C | Approx. 1600 |
Electrical Resistivity | Ω-m | 1 to 4 10x |
Specific Heat | J/kg-K | 670 to 1180 |
Tensile Strength | MPa (Ultimate) | 210 to 370 |
Young's Modulus | GPa | 370 to 490 |
Exact Mass | 39.976927 | |
Monoisotopic Mass | 39.976927 |
Corrosion test results in liquids
Test Environment mg/cm2 yr)* Corrosive Weight Loss
(wt%)Conc. Reagent | Temp. (˚C) | Sintering SiC (NO Free S i) | Reaction Bonded SiC (12%Si) | Tungsten Carbide (6% Co) | Aluminum Oxide (99%) |
98%H2SO4 | 100 | 1.8 | 55.0 | >1000 | 65.0 |
50%NaOH | 100 | 2.5 | >1000 | 5.0 | 75.0 |
53%HF | 25 | <0.2 | 7.9 | 8.0 | 20.0 |
85%H 3 PO 4 | 100 | <0.2 | 8.8 | 55.0 | >1000 |
70%HNO 3 | 100 | <0.2 | 0.5 | >1000 | 7.0 |
45%KOH | 100 | <0.2 | >1000 | 3.0 | 60.0 |
25%HCl | 70 | <0.2 | 0.9 | 85.0 | 72.0 |
10%HF plus NO 3 | 25 | <0.2 | >1000 | >1000 | 16.0 |
Test Time: 125 to 300 hours of submersive testing, continuously stirred.
Corrosion Weight Loss Guide:
>1000 mg/cm2 yr Completely destroyed within days.
100 to 999 mg/cm2 yr Not recommended for servicegreater than a month
50 to 100 mg/cm2 yr Not recommended for servicegreater than one year
10 to 49 mg/cm2 yr Caution recommended, basedon the specific application.
0.3 to 9.9 mg/cm2 yr Recommended for long term service
<2mg/cm2 y Recommended for long term service; no corrosion, other than as a result of surface cleaning, was evidenced.
Items | Unit | RBSiC | SSiC | RSiC |
Max. Service Temp (air) | ℃ | 1380 | 1650 | 1650 |
Density | g/cm³ | ≥3.02 | ≥ 3.10 | 2.60-2.74 |
Open Porosity | % | < 0.1 | 0 | 15 |
Bending Strength | Mpa | 250 (20℃ ) | 380 | 100 |
Mpa | 280 (1200 ℃) | 370 | 120 | |
Modulus of Elasticity | Gpa | 330 (20℃ ) | 350 | 240 |
Gpa | 300 (1200 ℃) | 300 | 200 | |
Thermal Conductivity | W/m.k | 40 (1200 ℃) | 35 | 10 |
Coefficient of Thermal Expansion | K -1 × 10-6 | 4.5 | 4.2 | 4.8 |
HV0.5 | 2200 | 2500 | / | |
SiC Content | % | 85 | 98 | 98.5 |
Si Content | % | 15 | 0 | 0 |
Acid Alkaline-proof | General | Excellent | Superior |
-High hardness, Mohs hardness rating of 9
-High thermal conductivity
-High-temperature strength
-Its electrical conductivity between that of metals and insulating materials
-Wear resistant
-Corrosion resistant
-Lightweight
–Low Density
-High Young's modulus
-Low thermal expansion coefficient
-Resistance to chemical reaction and thermally resistant
-Outstanding thermal shock resistance
-Refractive index greater than a diamond
–A promising substitute for traditional semiconductors such as silicon in high-temperature applications.
-Grinding wheels and abrasive paper and cloth products
-High-temperature bricks and other refractories
-Abrasive and cutting tools
-Structural material
-Automobile parts
-Electronic circuit elements
-Thin filament pyrometry
-Catalyst support
Standard Packing:
Sealed bags in carton boxes. Special package is available on request.
As a ceramic material, Silicon Carbide is quite fragile in a lot of cases. The Silicon Carbide Radiant tubes are usually held in plastic bags by vacuum, and protected with heavy foam.
ATTs' Silicon Carbide Radiant tubes is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Linear Formula | SiC |
MDL Number | MFCD00049531 |
EC No. | 206-991-8 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | 9863 |
IUPAC Name | methanidylidynesilicon |
SMILES | [C-]#[Si+] |
InchI Identifier | InChI=1S/CSi/c1-2 |
InchI Key | HBMJWWWQQXIZIP-UHFFFAOYSA-N |