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Silicon Carbide Radiant Tubes (SSiC)

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Indirect heating of gas is an important way, in the sintering , melting, heat treatment of metallic materials, and glass industries. Compared with direct combustion heating, gas indirect heating can greatly improve the thermal efficiency and reduce the emission of no and other harmful gases.

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Silicon Carbide Tubes

Indirect heating of gas is an important way, in the sintering , melting, heat treatment of metallic materials, and glass industries. Compared with direct combustion heating, gas indirect heating can greatly improve the thermal efficiency and reduce the emission of no and other harmful gases. At the same time, the stability of temperature is improved to ensure the control of atmosphere in the furnace. At the same time, in many industrial heating processes, the workpiece and combustion environment are required to be isolated. All of these need to be heated by indirect radiation. The traditional indirect heating mainly uses metal or its alloy as the radiation heating tube of the heating system, but up to now the upper limit of the maximum operating temperature of various metal radiation tubes is only 1000℃ , which can not meet the higher heating temperature required by many processes. At present, The main problem lies in the reliability problem of longterm use in higher temperature and more complex media. the pressureless sintered SiC radiant tube can be used stably for a long time in various corrosive media at a high temperature of 1650℃.


Synonyms

methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic

Silicon Carbide Tubes Specifications

Dimensions

Per your request or drawing

We can customized as required

Properties(Theoretical)

The physical properties of pressureless sintered silicon carbide ceramics products

Physical propertiesUNITSSIC
(Composition:SiC)vol %≥ 98
Density 20°Cg/cm³>3.10
Open PorosityVol %0
(Hardness) 45NR45N93
(Hardness) HV1kg/mm²2350
(Flexural Strength 20°C)MPa320-400
(Flexural Strength1300°C)MPa360-410
Coefficient of thermal expansion10-6K-14
(Thermal Conductivity 20°C )Wm -1K-1116
(Thermal Conductivity 1200°CWm -1K-135
(Modulus of Elasticity @ RT )GPa410
Thermal shock resistance )
Excellent
(Max. Service Temp (air) )°CApprox. 1600
Electrical ResistivityΩ-m1 to 4 10x
Specific HeatJ/kg-K670 to 1180
Tensile StrengthMPa (Ultimate)210 to 370
Young's ModulusGPa370 to 490
Exact Mass
39.976927
Monoisotopic Mass
39.976927


Corrosion test results in liquids

Test Environment mg/cm2 yr)* Corrosive Weight Loss

(wt%)Conc. ReagentTemp. (˚C)Sintering SiC (NO Free S i)Reaction Bonded SiC (12%Si)Tungsten Carbide (6% Co)Aluminum Oxide (99%)
98%H2SO41001.855.0>100065.0
50%NaOH1002.5>10005.075.0
53%HF25<0.27.98.020.0
85%H 3 PO 4100<0.28.855.0>1000
70%HNO 3100<0.20.5>10007.0
45%KOH100<0.2>10003.060.0
25%HCl70<0.20.985.072.0
10%HF plus NO 325<0.2>1000>100016.0


Test Time: 125 to 300 hours of submersive testing, continuously stirred.

Corrosion Weight Loss Guide:

>1000 mg/cm2 yr Completely destroyed within days.

100 to 999 mg/cm2 yr Not recommended for servicegreater than a month

50 to 100 mg/cm2 yr Not recommended for servicegreater than one year

10 to 49 mg/cm2 yr Caution recommended, basedon the specific application.

0.3 to 9.9 mg/cm2 yr Recommended for long term service

<2mg/cm2 y Recommended for long term service; no corrosion, other than as a result of surface cleaning, was evidenced.

Comparison of Technical Data for Different Silicon carbide material

ItemsUnitRBSiCSSiCRSiC
Max. Service Temp (air)138016501650
Densityg/cm³≥3.02≥ 3.102.60-2.74
Open Porosity%< 0.1015
Bending StrengthMpa250 (20℃ )380100
Mpa280 (1200 ℃)370120
Modulus of ElasticityGpa330 (20℃ )350240
Gpa300 (1200 ℃)300200
Thermal ConductivityW/m.k40 (1200 ℃)3510
Coefficient of Thermal ExpansionK -1 × 10-64.54.24.8
HV0.5
22002500/
SiC Content%859898.5
Si Content%1500
Acid Alkaline-proof
GeneralExcellentSuperior

Advantage

-High hardness, Mohs hardness rating of 9

-High thermal conductivity

-High-temperature strength

-Its electrical conductivity between that of metals and insulating materials

-Wear resistant

-Corrosion resistant

-Lightweight

–Low Density

-High Young's modulus

-Low thermal expansion coefficient

-Resistance to chemical reaction and thermally resistant

-Outstanding thermal shock resistance

-Refractive index greater than a diamond

Applications of Silicon Carbide Radiant tubes

–A promising substitute for traditional semiconductors such as silicon in high-temperature applications.

-Grinding wheels and abrasive paper and cloth products

-High-temperature bricks and other refractories

-Abrasive and cutting tools

-Structural material

-Automobile parts

-Electronic circuit elements

-Thin filament pyrometry

-Catalyst support

Packing of Silicon Carbide Radiant tubes

Standard Packing:

Sealed bags in carton boxes. Special package is available on request.

As a ceramic material, Silicon Carbide is quite fragile in a lot of cases. The Silicon Carbide Radiant tubes are usually held in plastic bags by vacuum, and protected with heavy foam.

ATTs' Silicon Carbide Radiant tubes is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

Chemical Identifiers

Linear FormulaSiC
MDL NumberMFCD00049531
EC No.206-991-8
Beilstein/Reaxys No.N/A
Pubchem CID9863
IUPAC Namemethanidylidynesilicon
SMILES[C-]#[Si+]
InchI IdentifierInChI=1S/CSi/c1-2
InchI KeyHBMJWWWQQXIZIP-UHFFFAOYSA-N
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