Product Code : CO-Ti:S-5N-CU
Titanium Doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and power outputs. Ti3+:sapphire crystal (Titanium-doped sapphire) as an optically pumped ，Ti: Sapphire laser’s tunable range is 650-1100nm, and peaking at 800nm. It is one of the broadest wavelength-tunable laser crystals. The upper-state lifetime of Ti: sapphire is short to 3.2ms. ATT possesses the advanced growth method of Temperature Gradient Technique (TGT), and it supplies large-sized Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102 cm-2. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (α490 = 4.0 cm-1), high gain and laser damage threshold. Titanium-doped sapphire (Ti:sapphire) crystals have excellent physical and optical properties. These crystals have an absorption band in the green region and can be used in medical laser systems, lidars and laser spectroscopy.
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Product Information
Titanium Doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and power outputs. Ti3+:sapphire crystal (Titanium-doped sapphire) as an optically pumped ，Ti: Sapphire laser’s tunable range is 650-1100nm, and peaking at 800nm. It is one of the broadest wavelength-tunable laser crystals. The upper-state lifetime of Ti: sapphire is short to 3.2ms. ATT possesses the advanced growth method of Temperature Gradient Technique (TGT), and it supplies large-sized Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102 cm-2. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (α490 = 4.0 cm-1), high gain and laser damage threshold. Titanium-doped sapphire (Ti:sapphire) crystals have excellent physical and optical properties. These crystals have an absorption band in the green region and can be used in medical laser systems, lidars and laser spectroscopy.
Because of the high saturation power, it’s hard to pump it by the lamp. Argon ion lasers, frequency-doubled Nd: YAG laser, etc., are usually adapted. Using self-mode-locking technology, the Ti: Sapphire laser can output laser pulse with pulse width as short as 6.5fs directly, the narrowest laser pulse of all lasers that directly output from the resonant cavity. The laser beam’s wavelength can cover broadband from blue to deep ultraviolet through frequency-double technology. Produced 193 nm laser has been used in lithography machine.
Synonyms
Ti:Sapphire
Ti:Sapphire Crystal Specification
Size：customized
| Materials | Ti3+:Al2O3 |
| Orientation | A-Axis within 5°，E-vector parallel to C-Axis |
| Parallelism | 30〞 |
| Perpendicularity | 5ˊ |
| Figure of Merit(FOM) | 100~300 (＞300 available upon special requests) |
| Wavefront Distortion | <λ /4@632 nm |
| Surface Flatness | <λ/8@632 nm |
| Clear Aperture | >90% |
| Surface Quality | 10-5(MIL-PRF-13830B) |
| Coatings | Standard coating is AR with R < 5.0% each |
| face @532 nm and R < 0.5% each face, | |
| from 650 nm to 850 nm. Custom coatings | |
| Chamfer | <0.2×45° |
| Diameter | 2~50 mm or specified |
| Path Length | 2~100 mm or specified |
| End Configurations | Flat/Flat or Brewster/Brewster ends |
| α490 | 1.0-4.0 cm-1 |
Per your request or drawing
We can customized as required
Properties（Theoretical）
| Compound Formula | Ti3+:Al2O3 |
| Crystal Phase / Structure | Hexagonal |
| Appearance | Bluish crystalline solid |
| Density | 3.98 g/cm3 |
| Melting Point | 2045 °C |
| Thermal Conductivity | 35 W / (m K) |
| Temperature dependence of refractive index | 13 × 10−6K−1 |
| Thermal shock resistance parameter | 790 W/m |
| Thermal Expansion | ≈ 5 × 10-6K-1 |
| Hardness (Mohs) | 9 |
| Young`s Modulus /GPa | 335 |
| Specific heat | 0.1 cal/g |
| Tensile Strength/Mpa | 400 |
| Diameter | 4-12mm |
| Ti density for 0.1% at. doping | 4.56 × 1019cm−3 |
| Lattice Parameter | a = 4.758 Å, c = 12.991 Å |
| Refractive Index | np = 1.759; nm = 1.767 |
Optical and Spectral Properties
| Laser Transition | F3/2→F1/2 |
| Laser Wavelength | 660-1200 nm |
| Central emission | 800 nm |
| Turnable Absorption Band | 400-600 nm |
| Absorption peak | 488 nm |
| Emission Cross Section @ 790 nm | 41 × 10-20 cm2 |
| Fluorescence Lifetime | 3.2 ms |
| Emission Linewidth | 650-1100 nm |
| Refractive Index @633 nm | 1.77@ 532 nm; 1.76@800 nm; 1.75@1100 nm |
| Absorption Coefficient | 0.5～6.0 cm-1 |
| Peak Cross-section | 3~4 × 10-19 cm2 |
| Laser Action | 4-level Vibronic |
Applications of Ti:Sapphire Crystal
The tunable wavelengths that cover a broad range from 700 to 1000 nm make Ti:Sapphire an excellent substitute for dye lasers in many applications；
Ti:Sapphire is also widely used as the pump source of OPOs to expand the tunable range.
Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193 nm ) laser with ultrafast pulses below 10fs；
Packing of Ti:Sapphire Crystal
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’ Ti:Sapphire Crystal is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition
Chemical Identifiers
| Linear Formula | Ti3+:Al2O3 |
