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Product Information
CVD silicon carbide (SiC) coatings have lots of advantages, including ultra-high purity surfaces and extremely high wear resistance. The CVD process can provide SiC coating with extremely high purity and theoretical density without pores. Moreover, since silicon carbide is very hard, it can be polished to a mirror-like surface. Because the coating products have excellent performance in high vacuum and high-temperature environments, Silicon Carbide Coated Graphite Trays are very suitable for the semiconductor industry and other ultra-clean environments. CVD silicon carbide coating has been applied in semiconductor industries already, such as MOCVD tray, RTP, and oxide etching chamber since silicon nitride has great thermal shock resistance and can withstand high energy plasma.
Synonyms
methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic
Silicon Carbide Coated Graphite Trays (SSiC) Specifications
Dimensions
Per your request or drawing
We can customized as required
Properties（Theoretical）
| Physical properties | UNIT | SSIC |
| （Composition：SiC） | vol % | ≥ 98 |
| Density 20°C | g/cm³ | ＞3.10 |
| Open Porosity | Vol % | 0 |
| （Hardness) 45N | R45N | 93 |
| （Hardness) HV1 | kg/mm² | 2350 |
| （Flexural Strength 20°C) | MPa | 320-400 |
| （Flexural Strength1300°C) | MPa | 360-410 |
| Coefficient of thermal expansion | 10-6K-1 | 4 |
| （Thermal Conductivity 20°C ) | Wm -1K-1 | 116 |
| （Thermal Conductivity 1200°C | Wm -1K-1 | 35 |
| （Modulus of Elasticity @ RT ) | GPa | 410 |
| Thermal shock resistance ) | Excellent | |
| （Max. Service Temp (air) ) | °C | Approx. 1600 |
| Electrical Resistivity | Ω-m | 1 to 4 10x |
| Specific Heat | J/kg-K | 670 to 1180 |
| Tensile Strength | MPa (Ultimate) | 210 to 370 |
| Young's Modulus | GPa | 370 to 490 |
| Exact Mass | 39.976927 | |
| Monoisotopic Mass | 39.976927 |
Corrosion test results in liquids
Test Environment mg/cm2 yr）* Corrosive Weight Loss
| （wt%）Conc. Reagent | Temp. (˚C) | Sintering SiC (NO Free S i) | Reaction Bonded SiC (12%Si) | Tungsten Carbide (6% Co) | Aluminum Oxide (99%) |
| 98%H2SO4 | 100 | 1.8 | 55.0 | ＞1000 | 65.0 |
| 50%NaOH | 100 | 2.5 | ＞1000 | 5.0 | 75.0 |
| 53%HF | 25 | <0.2 | 7.9 | 8.0 | 20.0 |
| 85%H 3 PO 4 | 100 | <0.2 | 8.8 | 55.0 | ＞1000 |
| 70%HNO 3 | 100 | <0.2 | 0.5 | ＞1000 | 7.0 |
| 45%KOH | 100 | <0.2 | ＞1000 | 3.0 | 60.0 |
| 25%HCl | 70 | <0.2 | 0.9 | 85.0 | 72.0 |
| 10%HF plus NO 3 | 25 | <0.2 | ＞1000 | ＞1000 | 16.0 |
Test Time:125 to 300 hours of submersive testing, continuously stirred.
Corrosion Weight Loss Guide:
>1000 mg/cm2 yr Completely destroyed within days.
100 to 999 mg/cm2 yr Not recommended for servicegreater than a month
50 to 100 mg/cm2 yr Not recommended for servicegreater than one year
10 to 49 mg/cm2 yr Caution recommended, basedon the specific application.
0.3 to 9.9 mg/cm2 yr Recommended for long term service
<2mg/cm2 y Recommended for long term service; no corrosion, other than as a result of surface cleaning, was evidenced.
Comparison of Technical Data for Different Silicon carbide material
| Items | Unit | RBSiC | SSiC | RSiC |
| Max. Service Temp (air) | ℃ | 1380 | 1650 | 1650 |
| Density | g/cm³ | ≥3.02 | ≥ 3.10 | 2.60-2.74 |
| Open Porosity | % | < 0.1 | 0 | 15 |
| Bending Strength | Mpa | 250 （20℃ ） | 380 | 100 |
| Mpa | 280 (1200 ℃) | 370 | 120 | |
| Modulus of Elasticity | Gpa | 330 （20℃ ） | 350 | 240 |
| Gpa | 300 (1200 ℃) | 300 | 200 | |
| Thermal Conductivity | W/m.k | 40 (1200 ℃) | 35 | 10 |
| Coefficient of Thermal Expansion | K -1 × 10-6 | 4.5 | 4.2 | 4.8 |
| HV0.5 | 2200 | 2500 | / | |
| SiC Content | % | 85 | 98 | 98.5 |
| Si Content | % | 15 | 0 | 0 |
| Acid Alkaline-proof | General | Excellent | Superior |
Advantages
-High hardness, Mohs hardness rating of 9
-High thermal conductivity
-High-temperature strength
-Its electrical conductivity between that of metals and insulating materials
-Wear resistant
-Corrosion resistant
-Lightweight
– Low Density
-High Young’s modulus
-Low thermal expansion coefficient
-Resistance to chemical reaction and thermally resistant
-Outstanding thermal shock resistance
-Refractive index greater than a diamond
Applications of Silicon Carbide Coated Graphite Trays
CVD silicon carbide coating has been applied in semiconductor industries
–Silicon carbide is widely used in semiconductors and coating.
– A promising substitute for traditional semiconductors such as silicon in high-temperature applications.
-Grinding wheels and abrasive paper and cloth products
-High-temperature bricks and other refractories
-Abrasive and cutting tools
-Structural material
-Automobile parts
-Electronic circuit elements
-Thin filament pyrometry
-Catalyst support
Packing of Silicon Carbide Coated Graphite Trays
Standard Packing:
Sealed bags in carton boxes. Special package is available on request.
As a ceramic material, Silicon Carbide is quite fragile in a lot of cases. The Silicon Carbide Coated Graphite Trays are usually held in plastic bags by vacuum, and protected with heavy foam.
ATTs’ Silicon Carbide Coated Graphite Trays is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | SiC |
| MDL Number | MFCD00049531 |
| EC No. | 206-991-8 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 9863 |
| IUPAC Name | methanidylidynesilicon |
| SMILES | [C-]#[Si+] |
| InchI Identifier | InChI=1S/CSi/c1-2 |
| InchI Key | HBMJWWWQQXIZIP-UHFFFAOYSA-N |
| CAS | 409-21-2 |
