Home > Products > Ceramics > Silicon Carbide Ceramic > Silicon Carbide Grinding Barrel (SSiC),Pressureless sintered silicon carbide Grinding Barrel

Silicon Carbide Grinding Barrel (SSiC),Pressureless sintered silicon carbide Grinding Barrel

Product Code :

Owning to its high heat conductivity coefficient, the heat generated by friction can be quickly transferred out, which avoid heat storage of abrasive materials. Overall, high grinding efficiency, long service life and low overall operating cost make grinding barrel and wear liners extensive applications in the field of bead mill.


Please contact us if you need customized services. We will contact you with the price and availability in 24 hours.

Product Information

The hardness of silicon carbide ceramics is second only to diamond and cubic boron nitride. Its extremely high hardness enables it to have a very low abrasion, which can prevent material contamination. So it is suitable for various grinding and dispersing occasions. Owning to its high heat conductivity coefficient, the heat generated by friction can be quickly transferred out, which avoid heat storage of abrasive materials. Overall, high grinding efficiency, long service life and low overall operating cost make grinding barrel and wear liners extensive applications in the field of bead mill.


Synonyms

Methanidylidyne silicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic


Silicon Carbide Grinding Barrel (SSiC) Specifications

Dimensions

Per your request or drawing

We can customized as required


Properties(Theoretical)

Physical propertiesUNITSSIC
(Composition:SiC)vol %≥ 98
Density 20°Cg/cm³>3.10
Open PorosityVol %0
(Hardness) 45NR45N93
(Hardness) HV1kg/mm²2350
(Flexural Strength 20°C)MPa320-400
(Flexural Strength1300°C)MPa360-410
Coefficient of thermal expansion10-6K-14
(Thermal Conductivity 20°C )Wm -1K-1116
(Thermal Conductivity 1200°CWm -1K-135
(Modulus of Elasticity @ RT )GPa410
Thermal shock resistance )
Excellent
(Max. Service Temp (air) )°CApprox. 1600
Electrical ResistivityΩ-m1 to 4 10x
Specific HeatJ/kg-K670 to 1180
Tensile StrengthMPa (Ultimate)210 to 370
Young's ModulusGPa370 to 490
Exact Mass
39.976927
Monoisotopic Mass
39.976927


Corrosion test results in liquids

Test Environment             mg/cm2 yr)*  Corrosive Weight Loss


(wt%)Conc. ReagentTemp. (˚C)Sintering SiC (NO Free S i)Reaction Bonded SiC (12%Si)Tungsten Carbide (6% Co)Aluminum Oxide (99%)
98%H2SO41001.855.0>100065.0
50%NaOH1002.5>10005.075.0
53%HF25<0.27.98.020.0
85%H 3 PO 4100<0.28.855.0>1000
70%HNO 3100<0.20.5>10007.0
45%KOH100<0.2>10003.060.0
25%HCl70<0.20.985.072.0
10%HF plus NO 325<0.2>1000>100016.0


Test Time:125 to 300 hours of submersive testing, continuously stirred.

Corrosion Weight Loss Guide:

>1000 mg/cm2 yr      Completely destroyed within days.

100 to 999 mg/cm2 yr   Not recommended for servicegreater than a month

50 to 100 mg/cm2 yr     Not recommended for servicegreater than one year

10 to 49 mg/cm2 yr        Caution recommended, basedon the specific application.

0.3 to 9.9 mg/cm2 yr       Recommended for long term service

<2mg/cm2 y     Recommended for long term service; no corrosion, other than as a result of surface cleaning, was evidenced.

 

Comparison of Technical Data for Different Silicon carbide material


ItemsUnitRBSiCSSiCRSiC
Max.   Service Temp (air)138016501650
Densityg/cm³≥3.02≥   3.102.60-2.74
Open   Porosity%<   0.1015
Bending   StrengthMpa250   (20℃ )380100
Mpa280   (1200 ℃)370120
Modulus   of ElasticityGpa330   (20℃ )350240
Gpa300   (1200 ℃)300200
Thermal   ConductivityW/m.k40   (1200 ℃)3510
Coefficient   of Thermal ExpansionK   -1 × 10-64.54.24.8
HV0.5
22002500/
SiC   Content%859898.5
Si   Content%1500
Acid   Alkaline-proof
GeneralExcellentSuperior







Advantages

-High hardness, Mohs hardness rating of 9

-High thermal conductivity

-High-temperature strength

-Its electrical conductivity between that of metals and insulating materials

-Wear resistant

-Corrosion resistant

-Lightweight

– Low Density

-High Young’s modulus

-Low thermal expansion coefficient

-Resistance to chemical reaction and thermally resistant

-Outstanding thermal shock resistance

-Refractive index greater than a diamond


Applications of Silicon Carbide Grinding Barrel


– A promising substitute for traditional semiconductors such as silicon in high-temperature applications.

-Grinding wheels and abrasive paper and cloth products

-High-temperature bricks and other refractories

-Abrasive and cutting tools

-Structural material

-Automobile parts

-Electronic circuit elements

 -Thin filament pyrometry

-Catalyst support

 

Packing of Silicon Carbide Grinding Barrel

Standard Packing:

Sealed bags in carton box

Linear   FormulaSiC
MDL   NumberMFCD00049531
EC   No.206-991-8
Beilstein/Reaxys   No.N/A
Pubchem   CID9863
IUPAC   Namemethanidylidynesilicon
SMILES[C-]#[Si+]
InchI   IdentifierInChI=1S/CSi/c1-2
InchI   KeyHBMJWWWQQXIZIP-UHFFFAOYSA-N


es. Special package is available on request.

As a ceramic material, Silicon Carbide is quite fragile in a lot of cases. The Silicon Carbide Grinding Barrel are usually held in plastic bags by vacuum, and protected with heavy foam.

ATTs’ Silicon Carbide Grinding Barrel is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
















Chemical Identifiers

Linear   FormulaSiC
MDL   NumberMFCD00049531
EC   No.206-991-8
Beilstein/Reaxys   No.N/A
Pubchem   CID9863
IUPAC   Namemethanidylidynesilicon
SMILES[C-]#[Si+]
InchI   IdentifierInChI=1S/CSi/c1-2
InchI   KeyHBMJWWWQQXIZIP-UHFFFAOYSA-N
CAS409-21-2




Related Products
(518)606-3901
(518)606-3901