Product Code :
The heat conduction velocity of saggars is very high, so that the products are heated evenly, which effectively reduce the energy consumption, speed up the firing, and increase the production. Pressureless-sintered silicon carbide saggar is widely used in the detection of lithium ion battery materials, electronic components, magnetic materials, strongly corrosive materials, as well as sintering of various ceramic powders
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Product Information
Pressureless-sintered silicon carbide saggars has the characteristics of high temperature resistance, good thermal shock stability, small expansion coefficient, resistance to corrosion of various strong acids and alkali, good spalling resistance, good resistance to pulverization, and good high-temperature creep property. Besides, the heat conduction velocity of saggars is very high, so that the products are heated evenly, which effectively reduce the energy consumption, speed up the firing, and increase the production. Pressureless-sintered silicon carbide saggar is widely used in the detection of lithium ion battery materials, electronic components, magnetic materials, strongly corrosive materials, as well as sintering of various ceramic powders
Synonyms
methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic
Silicon Carbide Saggars (SSiC) Specifications
Dimensions
Per your request or drawing
We can customized as required
Properties（Theoretical）
The physical properties of pressureless sintered silicon carbide ceramics products
| Physical properties | UNIT | SSIC |
| （Composition：SiC） | vol % | ≥ 98 |
| Density 20°C | g/cm³ | ＞3.10 |
| Open Porosity | Vol % | 0 |
| （Hardness) 45N | R45N | 93 |
| （Hardness) HV1 | kg/mm² | 2350 |
| （Flexural Strength 20°C) | MPa | 320-400 |
| （Flexural Strength1300°C) | MPa | 360-410 |
| Coefficient of thermal expansion | 10-6K-1 | 4 |
| （Thermal Conductivity 20°C ) | Wm -1K-1 | 116 |
| （Thermal Conductivity 1200°C | Wm -1K-1 | 35 |
| （Modulus of Elasticity @ RT ) | GPa | 410 |
| Thermal shock resistance ) | Excellent | |
| （Max. Service Temp (air) ) | °C | Approx. 1600 |
| Electrical Resistivity | Ω-m | 1 to 4 10x |
| Specific Heat | J/kg-K | 670 to 1180 |
| Tensile Strength | MPa (Ultimate) | 210 to 370 |
| Young's Modulus | GPa | 370 to 490 |
| Exact Mass | 39.976927 | |
| Monoisotopic Mass | 39.976927 |
Corrosion test results in liquids
Test Environment mg/cm2 yr）* Corrosive Weight Loss
| （wt%）Conc. Reagent | Temp. (˚C) | Sintering SiC (NO Free S i) | Reaction Bonded SiC (12%Si) | Tungsten Carbide (6% Co) | Aluminum Oxide (99%) |
| 98%H2SO4 | 100 | 1.8 | 55.0 | ＞1000 | 65.0 |
| 50%NaOH | 100 | 2.5 | ＞1000 | 5.0 | 75.0 |
| 53%HF | 25 | <0.2 | 7.9 | 8.0 | 20.0 |
| 85%H 3 PO 4 | 100 | <0.2 | 8.8 | 55.0 | ＞1000 |
| 70%HNO 3 | 100 | <0.2 | 0.5 | ＞1000 | 7.0 |
| 45%KOH | 100 | <0.2 | ＞1000 | 3.0 | 60.0 |
| 25%HCl | 70 | <0.2 | 0.9 | 85.0 | 72.0 |
| 10%HF plus NO 3 | 25 | <0.2 | ＞1000 | ＞1000 | 16.0 |
Test Time:125 to 300 hours of submersive testing, continuously stirred.
Corrosion Weight Loss Guide:
>1000 mg/cm2 yr Completely destroyed within days.
100 to 999 mg/cm2 yr Not recommended for servicegreater than a month
50 to 100 mg/cm2 yr Not recommended for servicegreater than one year
10 to 49 mg/cm2 yr Caution recommended, basedon the specific application.
0.3 to 9.9 mg/cm2 yr Recommended for long term service
<2mg/cm2 y Recommended for long term service; no corrosion, other than as a result of surface cleaning, was evidenced.
Comparison of Technical Data for Different Silicon carbide material
| Items | Unit | RBSiC | SSiC | RSiC |
| Max. Service Temp (air) | ℃ | 1380 | 1650 | 1650 |
| Density | g/cm³ | ≥3.02 | ≥ 3.10 | 2.60-2.74 |
| Open Porosity | % | < 0.1 | 0 | 15 |
| Bending Strength | Mpa | 250 （20℃ ） | 380 | 100 |
| Mpa | 280 (1200 ℃) | 370 | 120 | |
| Modulus of Elasticity | Gpa | 330 （20℃ ） | 350 | 240 |
| Gpa | 300 (1200 ℃) | 300 | 200 | |
| Thermal Conductivity | W/m.k | 40 (1200 ℃) | 35 | 10 |
| Coefficient of Thermal Expansion | K -1 × 10-6 | 4.5 | 4.2 | 4.8 |
| HV0.5 | 2200 | 2500 | / | |
| SiC Content | % | 85 | 98 | 98.5 |
| Si Content | % | 15 | 0 | 0 |
| Acid Alkaline-proof | General | Excellent | Superior |
Advantages
-High hardness, Mohs hardness rating of 9
-High thermal conductivity
-High-temperature strength
-Its electrical conductivity between that of metals and insulating materials
-Wear resistant
-Corrosion resistant
-Lightweight
– Low Density
-High Young’s modulus
-Low thermal expansion coefficient
-Resistance to chemical reaction and thermally resistant
-Outstanding thermal shock resistance
-Refractive index greater than a diamond
Applications of Silicon Carbide Saggars
– A promising substitute for traditional semiconductors such as silicon in high-temperature applications.
-Grinding wheels and abrasive paper and cloth products
-High-temperature bricks and other refractories
-Abrasive and cutting tools
-Structural material
-Automobile parts
-Electronic circuit elements
-Thin filament pyrometry
-Catalyst support
Packing of Silicon Carbide Saggars
Standard Packing:
Sealed bags in carton boxes. Special package is available on request.
As a ceramic material, Silicon Carbide is quite fragile in a lot of cases. The Silicon Carbide Saggars are usually held in plastic bags by vacuum, and protected with heavy foam.
ATTs’ Silicon Carbide Saggars is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | SiC |
| MDL Number | MFCD00049531 |
| EC No. | 206-991-8 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 9863 |
| IUPAC Name | methanidylidynesilicon |
| SMILES | [C-]#[Si+] |
| InchI Identifier | InChI=1S/CSi/c1-2 |
| InchI Key | HBMJWWWQQXIZIP-UHFFFAOYSA-N |
| CAS | 409-21-2 |
