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The properties of pressureless sintered silicon carbide ceramic products
•High temperature strength ---It can be used reliably in the air even when the temperature exceeds 1600°C (under inert gas and vacuum, the maximum temperature can reach 2000°C)
•Hardness---SSiC is a high-performance material second only to diamond and cubic boron nitride
•Wear resistance---ultra-high hardness and density make it ideal for parts often subject to high wear
•Thermal shock resistance---Due to the high thermal conductivity and low thermal expansion coefficient, it has excellent thermal shock resistance, and compared with other refractory materials, it performs better in rapid thermal cycling
•Corrosion, oxidation and erosion resistance--- high density, low porosity and chemical inertness make it work well in hot gas and liquid environments, oxidizing and corrosive gases, and strong acids and alkalis even at ultra-high temperatures
•High thermal conductivity- it has the equivalent thermal conductivity of graphite material, and 5 times of alumina
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Product Information
ATT produces sintered SiC tubes, reaction bonded SiC tubes, and recrystallized SiC tubes. Our recrystallized SiC products have high purity, while our reaction bonded and sintered silicon carbide balls have high mechanical strength. Our silicon carbide tube possesses good wearability, a low thermal expansion coefficient, extreme corrosion resistance, high hardness, and self-lubricating properties.
Synonyms
methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic
Silicon Carbide Tube (SSiC) Specifications
Dimensions
Per your request or drawing
We can customized as required
Properties（Theoretical）
The physical properties of pressureless sintered silicon carbide ceramics products
| Physical properties | UNIT | SSIC |
| （Composition：SiC） | vol % | ≥ 98 |
| Density 20°C | g/cm³ | ＞3.10 |
| Open Porosity | Vol % | 0 |
| （Hardness) 45N | R45N | 93 |
| （Hardness) HV1 | kg/mm² | 2350 |
| （Flexural Strength 20°C) | MPa | 320-400 |
| （Flexural Strength1300°C) | MPa | 360-410 |
| Coefficient of thermal expansion | 10-6K-1 | 4 |
| （Thermal Conductivity 20°C ) | Wm -1K-1 | 116 |
| （Thermal Conductivity 1200°C | Wm -1K-1 | 35 |
| （Modulus of Elasticity @ RT ) | GPa | 410 |
| Thermal shock resistance ) | Excellent | |
| （Max. Service Temp (air) ) | °C | Approx. 1600 |
| Electrical Resistivity | Ω-m | 1 to 4 10x |
| Specific Heat | J/kg-K | 670 to 1180 |
| Tensile Strength | MPa (Ultimate) | 210 to 370 |
| Young's Modulus | GPa | 370 to 490 |
| Exact Mass | 39.976927 | |
| Monoisotopic Mass | 39.976927 |
Corrosion test results in liquids
Test Environment mg/cm2 yr）* Corrosive Weight Loss
| （wt%）Conc. Reagent | Temp. (˚C) | Sintering SiC (NO Free S i) | Reaction Bonded SiC (12%Si) | Tungsten Carbide (6% Co) | Aluminum Oxide (99%) |
| 98%H2SO4 | 100 | 1.8 | 55.0 | ＞1000 | 65.0 |
| 50%NaOH | 100 | 2.5 | ＞1000 | 5.0 | 75.0 |
| 53%HF | 25 | <0.2 | 7.9 | 8.0 | 20.0 |
| 85%H 3 PO 4 | 100 | <0.2 | 8.8 | 55.0 | ＞1000 |
| 70%HNO 3 | 100 | <0.2 | 0.5 | ＞1000 | 7.0 |
| 45%KOH | 100 | <0.2 | ＞1000 | 3.0 | 60.0 |
| 25%HCl | 70 | <0.2 | 0.9 | 85.0 | 72.0 |
| 10%HF plus NO 3 | 25 | <0.2 | ＞1000 | ＞1000 | 16.0 |
Test Time:125 to 300 hours of submersive testing, continuously stirred.
Corrosion Weight Loss Guide:
>1000 mg/cm2 yr Completely destroyed within days.
100 to 999 mg/cm2 yr Not recommended for servicegreater than a month
50 to 100 mg/cm2 yr Not recommended for servicegreater than one year
10 to 49 mg/cm2 yr Caution recommended, basedon the specific application.
0.3 to 9.9 mg/cm2 yr Recommended for long term service
<2mg/cm2 y Recommended for long term service; no corrosion, other than as a result of surface cleaning, was evidenced.
Comparison of Technical Data for Different Silicon carbide material
| Items | Unit | RBSiC | SSiC | RSiC |
| Max. Service Temp (air) | ℃ | 1380 | 1650 | 1650 |
| Density | g/cm³ | ≥3.02 | ≥ 3.10 | 2.60-2.74 |
| Bulk Density | g/cm3 | 2.7 | 3.1 | 3 |
| Open Porosity | % | < 0.1 | 0 | 15 |
| Bending Strength | Mpa | 250 （20℃ ） | 380 | 100 |
| Mpa | 280 (1200 ℃) | 370 | 120 | |
| Modulus of Elasticity | Gpa | 330 （20℃ ） | 350 | 240 |
| Gpa | 300 (1200 ℃) | 300 | 200 | |
| Thermal Conductivity | W/m.k | 40 (1200 ℃) | 35 | 10 |
| Coefficient of Thermal Expansion | K -1 × 10-6 | 4.5 | 4.2 | 4.8 |
| HV0.5 | 2200 | 2500 | / | |
| Appearance Porosity | 0.1 | 2.5 | <15% | |
| SiC Content | % | 85 | 98 | 98.5 |
| Si Content | % | 15 | 0 | 0 |
| Compressive strength | MPa | 2100 | 2200 | >300 |
| Flexural strength | MPa | 110 | 400 | 380 |
| Acid Alkaline-proof | General | Excellent | Superior | |
| Main characteristics | Chemical Resistance | Fracture Toughness | High temp. High resistance. High purity |
Advantages
-High hardness, Mohs hardness rating of 9
-High thermal conductivity
-High-temperature strength
-Its electrical conductivity between that of metals and insulating materials
-Wear resistant
-Corrosion resistant
-Lightweight
– Low Density
-High Young’s modulus
-Low thermal expansion coefficient
-Resistance to chemical reaction and thermally resistant
-Outstanding thermal shock resistance
-Refractive index greater than a diamond
Applications of Silicon Carbide Tube
– A promising substitute for traditional semiconductors such as silicon in high-temperature applications.
-Grinding wheels and abrasive paper and cloth products
-High-temperature bricks and other refractories
-Abrasive and cutting tools
-Structural material
-Automobile parts
-Electronic circuit elements
-Thin filament pyrometry
-Catalyst support
Packing of Silicon Carbide Tube
Standard Packing:
Sealed bags in carton boxes. Special package is available on request.
As a ceramic material, Silicon Carbide is quite fragile in a lot of cases. The Silicon Carbide Tube are usually held in plastic bags by vacuum, and protected with heavy foam.
ATTs’ Silicon Carbide Tube is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | SiC |
| MDL Number | MFCD00049531 |
| EC No. | 206-991-8 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 9863 |
| IUPAC Name | methanidylidynesilicon |
| SMILES | [C-]#[Si+] |
| InchI Identifier | InChI=1S/CSi/c1-2 |
| InchI Key | HBMJWWWQQXIZIP-UHFFFAOYSA-N |
| CAS | 409-21-2 |
