Product Code : ST-Bi-5N-Cu
Bismuth (Bi) sputtering targets are used in physical vapor deposition (PVD) processes to deposit thin films of bismuth onto substrates such as glass, silicon, or metal. Bismuth is a chemical element with atomic number 83 and symbol Bi. It is a dense, silvery-white metal that is relatively soft and easily oxidized.
Bismuth sputtering targets are typically made of high-purity bismuth metal or bismuth oxide (Bi2O3) powder. They come in various shapes and sizes depending on the specific application, and are often used in conjunction with other sputtering targets such as indium or tin to create multilayer thin films.
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Product Information
Bismuth (Bi) sputtering targets are used in physical vapor deposition (PVD) processes to deposit thin films of bismuth onto substrates such as glass, silicon, or metal. Bismuth is a chemical element with atomic number 83 and symbol Bi. It is a dense, silvery-white metal that is relatively soft and easily oxidized.
Bismuth sputtering targets are typically made of high-purity bismuth metal or bismuth oxide (Bi2O3) powder. They come in various shapes and sizes depending on the specific application, and are often used in conjunction with other sputtering targets such as indium or tin to create multilayer thin films.
Chemical Formula:Bi
CAS Number: 7440-69-9
Synonyms
N/A
Bismuth (Bi) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size：
| Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
| Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
| Thickness | 0.125”, 0.25” | |
Properties（Theoretical）
| Molecular Weight | 208.98 |
| Appearance | solid |
| Melting Point | 271.3 °C |
| Boiling Point | 1560 °C |
| Density | 9.747 g/cm3 |
| Solubility in H2O | N/A |
| Electrical Resistivity | 106.8 microhm-cm @ 0 °C |
| Electronegativity | 1.9 Paulings |
| Heat of Vaporization | 42.7 K-Cal/gm atom at 1560 °C |
| Poisson's Ratio | 0.33 |
| Specific Heat | 0.0296 Cal/g/K @ 25 °C |
| Tensile Strength | N/A |
| Thermal Conductivity | 0.0792 W/cm/ K @ 298.2 K |
| Thermal Expansion | (25 °C) 13.4 µm·m-1·K-1 |
| Vickers Hardness | N/A |
| Young's Modulus | 32 GPa |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Bismuth (Bi) Sputtering Target
Bismuth (Bi) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Bismuth (Bi) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Bismuth (Bi) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | Bi |
| MDL Number | MFCD00134033 |
| EC No. | 231-177-4 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 5359367 |
| SMILES | [Bi] |
| InchI Identifier | InChI=1S/Bi |
| InchI Key | JCXGWMGPZLAOME-UHFFFAOYSA-N |
