Product Code : ST-Bi4Ti3O12-5N-Cu
Bismuth titanate (Bi4Ti3O12) sputtering targets are high-purity materials used for thin film deposition in various industries such as electronics, solar cells, and optics. These targets are manufactured using advanced techniques to ensure high purity, uniformity, and good density. Bi4Ti3O12 is a type of titanate material that exhibits excellent ferroelectric and piezoelectric properties. Bi4Ti3O12 sputtering targets are suitable for use in various deposition processes, including reactive sputtering and magnetron sputtering. They offer excellent resistance to wear and possess remarkable physical and chemical properties that make them the ideal material for use in thin film deposition. Bi4Ti3O12 sputtering targets are an integral part of the thin film deposition process and contribute to the development of next-generation electronic and photonic devices.
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Product Information
Bismuth titanate (Bi4Ti3O12) sputtering targets are high-purity materials used for thin film deposition in various industries such as electronics, solar cells, and optics. These targets are manufactured using advanced techniques to ensure high purity, uniformity, and good density. Bi4Ti3O12 is a type of titanate material that exhibits excellent ferroelectric and piezoelectric properties. Bi4Ti3O12 sputtering targets are suitable for use in various deposition processes, including reactive sputtering and magnetron sputtering. They offer excellent resistance to wear and possess remarkable physical and chemical properties that make them the ideal material for use in thin film deposition. Bi4Ti3O12 sputtering targets are an integral part of the thin film deposition process and contribute to the development of next-generation electronic and photonic devices.
Chemical Formula:Bi4Ti3O12
CAS Number: 12010-77-4
Synonyms
N/A
Bismuth Titanate (Bi4Ti3O12) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size:
Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
Thickness | 0.125”, 0.25” |
Properties(Theoretical)
Compound Formula | Bi4O12Ti3 |
Molecular Weight | 1171.52 |
Appearance | Solid |
Melting Point | N/A |
Boiling Point | N/A |
Density | N/A |
Solubility in H2O | N/A |
Exact Mass | N/A |
Monoisotopic Mass | 1171.704468 |
Charge | N/A |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Bismuth Titanate (Bi4Ti3O12) Sputtering Target
Bismuth Titanate (Bi4Ti3O12) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Bismuth Titanate (Bi4Ti3O12) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Bismuth Titanate (Bi4Ti3O12) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
Linear Formula | Bi4Ti3O12 |
MDL Number | N/A |
EC No. | 234-564-6 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | N/A |
IUPAC Name | bismuth(3+); tetraoxidotitanium |
SMILES | [BiH3+3].[BiH3+3].[BiH3+3].[BiH3+3].[O-][Ti]([O-])([O-])[O-].[O-][Ti]([O-])([O-])[O-].[O-][Ti]([O-])([O-])[O-] |
InchI Identifier | InChI=1S/4Bi.12O.3Ti/q4*+3;12*-1;;; |
InchI Key | KVNMYNXIQDOFRJ-UHFFFAOYSA-N |