Product Code : ST-BN-5N-Cu
Boron nitride sputtering target from ATT contains the element of B and N. Boron nitride, with “BN” as its standard chemical symbol, is a ceramic material that has the advantages of high heat capacity, excellent thermal conductivity and low dielectric constant and excellent dielectric strength. In addition, BN materials are easy to process and non-adhesive. These characteristics make boron nitride a truly excellent ceramic material and has a wide range of applications.
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Product Information
Boron nitride sputtering target from ATT contains the element of B and N. Boron nitride, with “BN” as its standard chemical symbol, is a ceramic material that has the advantages of high heat capacity, excellent thermal conductivity and low dielectric constant and excellent dielectric strength. In addition, BN materials are easy to process and non-adhesive. These characteristics make boron nitride a truly excellent ceramic material and has a wide range of applications.
ATT provides high-quality Boron nitride Sputtering Target for research and industry purposes at competitive prices. We can provide Boron nitride Sputtering Target with different purity, size, and density according to your requirements.
Chemical Formula: BN
CAS Number: 10043-11-5
Synonyms
N/A
Boron Nitride Sputtering Target Specification
Size:
Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
Thickness | 0.125”, 0.25” |
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Properties(Theoretical)
Compound Formula | BN |
Molecular Weight | 24.82 |
Appearance | solid |
Melting Point | N/A |
Boiling Point | N/A |
Density | 1.9 to 2.1 g/cm3 |
Solubility in H2O | N/A |
Electrical Resistivity | 13 to 15 10x Ω-m |
Poisson's Ratio | 0.11 |
Specific Heat | 840 to 1610 J/kg-K |
Thermal Conductivity | 29 to 96 W/m-K |
Thermal Expansion | 0.54 to 18 µm/m-K |
Young's Modulus | 14 to 60 GPa |
Exact Mass | 25.0124 |
Monoisotopic Mass | 25.0124 |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Boron Nitride Sputtering Target
Boron nitride sputtering targets are used for thin film deposition, typically for fuel cell, decoration, electrical insulator, semiconductor, display, LED and photovoltaic devices, glass coating, etc. Because of excellent thermal and chemical stability, boron nitride ceramics products are traditionally used as parts of high-temperature equipment. Boron nitride also has potential use in nanotechnology. BN nanotubes can be produced that have a structure similar to that of carbon nanotubes, i.e. graphene (or BN) sheets rolled on themselves, but the properties are very different. Hexagonal BN (h-BN) Ceramic is usually used to make BN crucible. Cubic boron nitride (c-BN) is used as an abrasive and is an ideal material for heat spreaders. Amorphous boron nitride (a-BN) Layers of amorphous boron nitride (a-BN) are used in some semiconductor devices.
Packing of Boron Nitride Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Boron Nitride Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
Linear Formula | BN |
MDL Number | MFCD00011317 |
EC No. | 233-136-6 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | 66227 |
IUPAC Name | azanylidyneborane |
SMILES | B#N |
InchI Identifier | InChI=1S/BN/c1-2 |
InchI Key | PZNSFCLAULLKQX-UHFFFAOYSA-N |