Product Code : ST-Er2O3-5N-Cu
Erbium Oxide (Er2O3) sputtering targets are essential materials used in the sputtering process for the deposition of thin films in semiconductor and electronics industries. Er2O3 sputtering targets are made from high-purity erbium oxide, which provides excellent performance in the sputtering process. The sputtering process involves bombarding the sputtering target by high-energy ions, which cause the atoms at the surface of the target to be knocked off and deposited onto the substrate in a thin film form.
Er2O3 sputtering targets are widely used in the production of various electronic devices such as fiber optic amplifiers, field-effect transistors, and magnetic bubble memories. Its excellent thermal stability, optical transparency, and high refractive index make it ideal for use in fiber optic amplifiers. It is also a popular choice for the manufacture of magnetic bubble memories due to its high magnetic anisotropy and large magneto-optic effects.
Er2O3 sputtering targets are available in different sizes and shapes according to specific application requirements. It is compatible with different types of sputtering systems, including DC, RF, and magnetron sputtering. Er2O3 sputtering targets provide excellent uniformity, density, and adhesion to substrates, yielding high-quality, uniform, and homogeneous thin films.
In summary, Erbium Oxide (Er2O3) sputtering target plays a crucial role in the deposition of thin films required in the production of different electronic devices. Its excellent thermal stability, optical transparency, and high refractive index make it a top choice for use in fiber optic amplifiers. Its high magnetic anisotropy and large magneto-optic effects also make it suitable for use in magnetic bubble memories.
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Product Information
Erbium Oxide (Er2O3) sputtering targets are essential materials used in the sputtering process for the deposition of thin films in semiconductor and electronics industries. Er2O3 sputtering targets are made from high-purity erbium oxide, which provides excellent performance in the sputtering process. The sputtering process involves bombarding the sputtering target by high-energy ions, which cause the atoms at the surface of the target to be knocked off and deposited onto the substrate in a thin film form.
Er2O3 sputtering targets are widely used in the production of various electronic devices such as fiber optic amplifiers, field-effect transistors, and magnetic bubble memories. Its excellent thermal stability, optical transparency, and high refractive index make it ideal for use in fiber optic amplifiers. It is also a popular choice for the manufacture of magnetic bubble memories due to its high magnetic anisotropy and large magneto-optic effects.
Er2O3 sputtering targets are available in different sizes and shapes according to specific application requirements. It is compatible with different types of sputtering systems, including DC, RF, and magnetron sputtering. Er2O3 sputtering targets provide excellent uniformity, density, and adhesion to substrates, yielding high-quality, uniform, and homogeneous thin films.
In summary, Erbium Oxide (Er2O3) sputtering target plays a crucial role in the deposition of thin films required in the production of different electronic devices. Its excellent thermal stability, optical transparency, and high refractive index make it a top choice for use in fiber optic amplifiers. Its high magnetic anisotropy and large magneto-optic effects also make it suitable for use in magnetic bubble memories.
Chemical Formula:Er2O3
CAS Number: 12061-16-4
Synonyms
Erbium(3+); oxygen(2-), Erbia, Erbium trioxide, Dierbium trioxide, Erbium(III) oxide, Erbium sesquioxide
Erbium Oxide (Er2O3) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size:
Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
Thickness | 0.125”, 0.25” |
Properties(Theoretical)
Compound Formula | Er2O3 |
Molecular Weight | 382.56 |
Appearance | Pink |
Melting Point | 2,344° C (4,251° F) |
Boiling Point | 3,290° C (5,954° F) |
Density | 8.64 g/cm3 |
Solubility in H2O | N/A |
Exact Mass | 379.845 g/mol |
Monoisotopic Mass | 379.845344 Da |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Erbium Oxide (Er2O3) Sputtering Target
Erbium Oxide (Er2O3) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Erbium Oxide (Er2O3) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Erbium Oxide (Er2O3) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
Linear Formula | Er2O3 |
MDL Number | MFCD00010991 |
EC No. | 235-045-7 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | 5123419 |
IUPAC Name | Erbium(3+); oxygen(2-) |
SMILES | O=[Er]O[Er]=O |
InchI Identifier | InChI=1S/2Er.3O |
InchI Key | VQCBHWLJZDBHOS-UHFFFAOYSA-N |