Product Code : ST-HfC-5N-Cu
Hafnium carbide (HfC) is a refractory ceramic material that possesses excellent high-temperature mechanical and thermal properties, making it useful for a wide range of applications. Hafnium carbide sputtering targets are used in the manufacture of electronic components, such as capacitors, resistors, transistors, and microprocessors.
Sputtering is a process used in the manufacture of thin films of material, where a material is deposited onto a substrate by bombarding it with high-energy ions. Sputtering targets are made of high-purity materials that are used as the source for the deposition process.
Hafnium carbide sputtering targets are made by powder metallurgy techniques. High-purity hafnium carbide powder is mixed with a binder material and pressed into a desired shape and size. The target is then sintered at high temperatures to form a solid, dense, and uniform material.
The properties of hafnium carbide sputtering targets, such as their purity, density, grain size, and surface finish, are critical to the quality of the thin films that are deposited. Hafnium carbide targets are available in various shapes and sizes, and their properties can be tailored to meet specific customer requirements.
In conclusion, Hafnium carbide sputtering targets are essential components in the production of advanced electronic devices. They possess excellent mechanical and thermal properties, making them ideal for high-temperature applications. The critical importance of the target's properties to the thin films produced highlights the necessity of the manufacturing process involved in creating these targets.
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Product Information
Hafnium carbide (HfC) is a refractory ceramic material that possesses excellent high-temperature mechanical and thermal properties, making it useful for a wide range of applications. Hafnium carbide sputtering targets are used in the manufacture of electronic components, such as capacitors, resistors, transistors, and microprocessors.
Sputtering is a process used in the manufacture of thin films of material, where a material is deposited onto a substrate by bombarding it with high-energy ions. Sputtering targets are made of high-purity materials that are used as the source for the deposition process.
Hafnium carbide sputtering targets are made by powder metallurgy techniques. High-purity hafnium carbide powder is mixed with a binder material and pressed into a desired shape and size. The target is then sintered at high temperatures to form a solid, dense, and uniform material.
The properties of hafnium carbide sputtering targets, such as their purity, density, grain size, and surface finish, are critical to the quality of the thin films that are deposited. Hafnium carbide targets are available in various shapes and sizes, and their properties can be tailored to meet specific customer requirements.
In conclusion, Hafnium carbide sputtering targets are essential components in the production of advanced electronic devices. They possess excellent mechanical and thermal properties, making them ideal for high-temperature applications. The critical importance of the target's properties to the thin films produced highlights the necessity of the manufacturing process involved in creating these targets.
Chemical Formula:HfC
CAS Number: 12069-85-1
Hafnium Carbide (HfC) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size：
| Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
| Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
| Thickness | 0.125”, 0.25” | |
Properties（Theoretical）
| Compound Formula | CHf |
| Molecular Weight | 190.5 |
| Appearance | black target |
| Melting Point | 3,900° C (7,052° F) |
| Boiling Point | N/A |
| Density | 12.20 g/cm3 |
| Solubility in H2O | N/A |
| Exact Mass | 191.946549 |
| Monoisotopic Mass | 191.946549 |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Hafnium Carbide (HfC) Sputtering Target
Hafnium Carbide (HfC) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Hafnium Carbide (HfC) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Hafnium Carbide (HfC) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | HfC |
| MDL Number | MFCD00016126 |
| EC No. | 235-114-1 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 16212551 |
| IUPAC Name | methanidylidynehafnium(1+) |
| SMILES | [Hf+]#[C-] |
| InchI Identifier | InChI=1S/C.Hf/q-1;+1 |
| InchI Key | NVDNLVYQHRUYJA-UHFFFAOYSA-N |
