Hafnium Oxide Sputtering Target, HfO2

Product Information

Hafnium is a chemical element that originated from Copenhagen, Denmark (with the Latin name Hania). It was first mentioned in 1911 and observed by G. Urbain and V. Vernadsky. The isolation was later accomplished and announced by D. Coster and G. von Hevesy. “Hf” is the canonical chemical symbol of hafnium. Its atomic number in the periodic table of elements is 72 with the location at Period 6 and Group 4, belonging to the d-block. The relative atomic mass of hafnium is 178.49(2) Dalton, the number in the brackets indicating the uncertainty.

Oxygen is a chemical element that originated from the Greek ‘oxy’ and ‘genes’ meaning acid-forming. It was first mentioned in 1771 and observed by W. Scheele. The isolation was later accomplished and announced by W. Scheele. “O” is the canonical chemical symbol of oxygen. Its atomic number in the periodic table of elements is 8 with a location at Period 2 and Group 16, belonging to the p-block. The relative atomic mass of oxygen is 15.9994(3) Dalton, the number in the brackets indicating the uncertainty.

ATT provides high-quality Hafnium Oxide Sputtering Target for research and industry purposes at competitive prices. We can provide  Hafnium Oxide Sputtering Target with different purity, size, and density according to your requirements.

Chemical Formula: HfO2
CAS Number: 12055-23-1
Purity: 99.9%, 99.95%, 99.99%

Synonyms

Hafnium(IV) oxide, Hafnium dioxide, Diketohafnium, Dioxohafnium, Hafnium tetrahydrate, Hafnium hydroxide, Hafnia

 Hafnium Oxide  Sputtering Target Specification

Size：

Shape: Disc/Rectangular/Tube

Bonding: Unbonding/Bonding

Per your request or drawing

We can customized as required

Properties（Theoretical）

Sputtering Targets Requirements

General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.

Application of  Hafnium Oxide Sputtering Target

The hafnium oxide sputtering target is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. It is also for thin film deposition, decoration, semiconductor, display, LED and photovoltaic devices, functional coating, glass coating industry like car glass and architectural glass, etc.

Packing of  Hafnium Oxide Sputtering Target

Standard Packing:

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.

ATTs’ Hafnium Oxide  Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

Chemical Identifiers