Product Code : ST-InGaZnOx-5N-Cu
Indium Gallium Zinc Oxide (InGaZnOx) sputtering target is a solid material that is used as a source of InGaZnOx in sputtering processes. It is commonly used to create highly uniform and high-quality thin films on glass or flexible substrates for various applications, including thin-film transistors, solar cells, and displays.
The manufacturing process of InGaZnOx sputtering targets involves the preparation of a target powder mixture of indium oxide (In2O3), gallium oxide (Ga2O3), and zinc oxide (ZnO) through a process known as solid-state or sol-gel method. The powder mixture is then compacted and sintered to form a dense and homogeneous sputtering target.
In sputtering processes, the target is bombarded with charged particles, causing atoms or ions to be ejected from the surface and deposited on the substrate. The resulting thin film is highly controllable with excellent uniformity and high reproducibility.
InGaZnOx sputtering targets are widely used for applications requiring a highly transparent and conductive thin film, such as transparent electrodes, anti-reflection coatings, and touch panels. Due to their unique optical and electronic properties, InGaZnOx thin films offer excellent performance characteristics, including high electrical conductivity, high transparency, and stability.
InGaZnOx sputtering targets are becoming increasingly popular in the electronic and photovoltaic industries for their superior performance characteristics. There is a growing demand for InGaZnOx sputtering targets due to their potential use in various applications, including flexible electronics, solar cells, and displays, among others.
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Product Information
Indium Gallium Zinc Oxide (InGaZnOx) sputtering target is a solid material that is used as a source of InGaZnOx in sputtering processes. It is commonly used to create highly uniform and high-quality thin films on glass or flexible substrates for various applications, including thin-film transistors, solar cells, and displays.
The manufacturing process of InGaZnOx sputtering targets involves the preparation of a target powder mixture of indium oxide (In2O3), gallium oxide (Ga2O3), and zinc oxide (ZnO) through a process known as solid-state or sol-gel method. The powder mixture is then compacted and sintered to form a dense and homogeneous sputtering target.
In sputtering processes, the target is bombarded with charged particles, causing atoms or ions to be ejected from the surface and deposited on the substrate. The resulting thin film is highly controllable with excellent uniformity and high reproducibility.
InGaZnOx sputtering targets are widely used for applications requiring a highly transparent and conductive thin film, such as transparent electrodes, anti-reflection coatings, and touch panels. Due to their unique optical and electronic properties, InGaZnOx thin films offer excellent performance characteristics, including high electrical conductivity, high transparency, and stability.
InGaZnOx sputtering targets are becoming increasingly popular in the electronic and photovoltaic industries for their superior performance characteristics. There is a growing demand for InGaZnOx sputtering targets due to their potential use in various applications, including flexible electronics, solar cells, and displays, among others.
Chemical Formula: InGaZnOx
CAS Number: 151248-91-8
Synonyms
IGZO, InGaZnO, Gallium indium zinc oxide, GIZO, In2O3-Ga2O3-ZnO, InGaZnOx, InGaZnO, InZnGaO4, InGaZnOx, amorphous In2Ga2ZnO7 (a-IGZO), crystalline IGZO (c-IGZO), IGZO-TFT materials
Indium Gallium Zinc Oxide (InGaZnOx) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size：
| Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
| Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
| Thickness | 0.125”, 0.25” | |
Properties（Theoretical）
| Compound Formula | In2Ga2ZnO7 |
| Molecular Weight | 546.47 |
| Appearance | Yellow powder, pellets, sputtering targets, or other forms |
| Melting Point | 850 °C (as In2O3) |
| Boiling Point | N/A |
| Density | 6.5 g/cm3 |
| Solubility in H2O | Insoluble |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Indium Gallium Zinc Oxide (InGaZnOx) Sputtering Target
Indium Gallium Zinc Oxide (InGaZnOx) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Indium Gallium Zinc Oxide (InGaZnOx) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Indium Gallium Zinc Oxide (InGaZnOx) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | In2O3 / Ga2O3 / ZnO |
| MDL Number | N/A |
| EC No. | N/A |
| Pubchem CID | 92026789 |
