Product Code : ST-Si-5N-Cu
Pure Silicon (Si) sputtering target is a type of thin-film deposition material used for the fabrication of electronic components such as solar cells, semiconductor devices, and integrated circuits. Sputtering targets are typically made from high-purity materials and are used to deposit thin films of the substrate material onto a substrate surface through a technique called sputtering.
Pure Silicon (Si) targets are made from 99.999% high-quality silicon material, free from any impurities, which makes it a critical material for the fabrication of electronic devices where high purity is important. It is used in the semiconductor industry to create a variety of electronic components such as microprocessors, memory chips, and transistors.
The manufacturing process of Pure Silicon (Si) sputtering target involves melting the high-purity silicon material in an induction furnace to create uniformity. This is followed by solidification into a pre-defined shape, typically as a disc, and polishing to a high degree of surface quality.
Pure Silicon (Si) sputtering targets vary in thickness and size depending on the specific use and application. They are commonly used for deposition through techniques such as radio frequency (RF) magnetron sputtering, direct current (DC) sputtering, and pulsed laser deposition (PLD) to create thin films of high-purity silicon for a wide range of electronic applications.
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Product Information
Pure Silicon (Si) sputtering target is a type of thin-film deposition material used for the fabrication of electronic components such as solar cells, semiconductor devices, and integrated circuits. Sputtering targets are typically made from high-purity materials and are used to deposit thin films of the substrate material onto a substrate surface through a technique called sputtering.
Pure Silicon (Si) targets are made from 99.999% high-quality silicon material, free from any impurities, which makes it a critical material for the fabrication of electronic devices where high purity is important. It is used in the semiconductor industry to create a variety of electronic components such as microprocessors, memory chips, and transistors.
The manufacturing process of Pure Silicon (Si) sputtering target involves melting the high-purity silicon material in an induction furnace to create uniformity. This is followed by solidification into a pre-defined shape, typically as a disc, and polishing to a high degree of surface quality.
Pure Silicon (Si) sputtering targets vary in thickness and size depending on the specific use and application. They are commonly used for deposition through techniques such as radio frequency (RF) magnetron sputtering, direct current (DC) sputtering, and pulsed laser deposition (PLD) to create thin films of high-purity silicon for a wide range of electronic applications.
Chemical Formula:Si
CAS Number: 7440-21-3
Synonyms
Silicon sputter target, 767492, 40890, 40891, 40893
Pure Silicon (Si) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size：
| Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
| Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
| Thickness | 0.125”, 0.25” | |
Properties（Theoretical）
| Molecular Weight | 28.08 |
| Appearance | Silvery |
| Melting Point | 1414 °C |
| Boiling Point | 2900 °C |
| Density | 2330 kg/m3 |
| Solubility in H2O | N/A |
| Electrical Resistivity | 3-4 microhm-cm @ 0°C |
| Electronegativity | 1.8 Paulings |
| Heat of Vaporization | 40.6 K-Cal/gm atom at 2355 °C |
| Poisson's Ratio | 0.064 - 0.28 |
| Specific Heat | 0.168 Cal/g/K @ 25°C |
| Tensile Strength | N/A |
| Thermal Conductivity | 1.49 W/cm/K @ 298.2 K |
| Thermal Expansion | (25 °C) 2.6 µm·m-1·K-1 |
| Vickers Hardness | N/A |
| Young's Modulus | 51-80 GPa |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Pure Silicon (Si) Sputtering Target
Pure Silicon (Si) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Pure Silicon (Si) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Pure Silicon (Si) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | Si |
| MDL Number | MFCD00085311 |
| EC No. | 231-130-8 |
| Beilstein/Reaxys No. | N/A |
| Pubchem CID | 5461123 |
| SMILES | [Si] |
| InchI Identifier | InChI=1S/Si |
| InchI Key | XUIMIQQOPSSXEZ-UHFFFAOYSA-N |
