Product Code : ST-SiC-5N-Cu
Silicon Carbide sputtering target from ATT is a carbide ceramic sputtering material with the formula SiC.
Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.
Carbon is a chemical element that originated from the Latin ‘carbo’, meaning charcoal. It was early used in 3750 BC and discovered by Egyptians and Sumerians. “C” is the canonical chemical symbol of carbon. Its atomic number in the periodic table of elements is 6 with a location at Period 2 and Group 14, belonging to the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, the number in the brackets indicating the uncertainty.
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Product Information
Silicon Carbide sputtering target from ATT is a carbide ceramic sputtering material with the formula SiC.
Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.
Carbon is a chemical element that originated from the Latin ‘carbo’, meaning charcoal. It was early used in 3750 BC and discovered by Egyptians and Sumerians. “C” is the canonical chemical symbol of carbon. Its atomic number in the periodic table of elements is 6 with a location at Period 2 and Group 14, belonging to the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, the number in the brackets indicating the uncertainty.
ATT provides high-quality Silicon Carbide Sputtering Target for research and industry purposes at competitive prices. We can provide Silicon Carbide Sputtering Target with different purity, size, and density according to your requirements.
Chemical Formula: SiC
CAS Number: 409-21-2
Synonyms
N/A
Silicon Carbide Sputtering Target Specification
Size:
Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
Thickness | 0.125”, 0.25” |
Purity: 99.5%
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Properties(Theoretical)
Compound Formula | CSi |
Molecular Weight | 40.1 |
Appearance | Colorless crystals |
Melting Point | 2,730° C (4,946° F) (decomposes) |
Boiling Point | N/A |
Density | 3.0 to 3.2 g/cm3 |
Solubility in H2O | N/A |
Electrical Resistivity | 1 to 4 10x Ω-m |
Poisson's Ratio | 0.15 to 0.21 |
Specific Heat | 670 to 1180 J/kg-K |
Tensile Strength | 210 to 370 MPa (Ultimate) |
Thermal Conductivity | 120 to 170 W/m-K |
Thermal Expansion | 4.0 to 4.5 µm/m-K |
Young's Modulus | 370 to 490 GPa |
Exact Mass | 39.976927 |
Monoisotopic Mass | 39.976927 |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Packing of Silicon Carbide Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Silicon Carbide Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
Linear Formula | SiC |
MDL Number | MFCD00049531 |
EC No. | 206-991-8 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | 9863 |
IUPAC Name | methanidylidynesilicon |
SMILES | [C-]#[Si+] |
InchI Identifier | 1\/CSi\/c1-2 |
InchI Key | HBMJWWWQQXIZIP-UHFFFAOYSA-N |