Product Code : ST-Si3N4-5N-Cu
Silicon nitride sputtering target is a type of nitride ceramic sputtering target. Si3N4 is a high-melting-point ceramic material that is extremely hard and relatively chemically inert. Si3N4 is prepared by heating powdered silicon between 1300 °C and 1400 °C in an atmosphere of nitrogen. Then the powder of silicon nitride can be sintered to the designed shape. Silicon nitride sputter target is used for thin film deposition.
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Product Information
Silicon nitride sputtering target is a type of nitride ceramic sputtering target. Si3N4 is a high-melting-point ceramic material that is extremely hard and relatively chemically inert. Si3N4 is prepared by heating powdered silicon between 1300 °C and 1400 °C in an atmosphere of nitrogen. Then the powder of silicon nitride can be sintered to the designed shape. Silicon nitride sputter target is used for thin film deposition.
ATT provides high-quality Silicon nitride Sputtering Target for research and industry purposes at competitive prices. We can provide Silicon nitride Sputtering Target with different purity, size, and density according to your requirements.
Chemical Formula: Si3N4
CAS Number: 12033-89-5
Synonyms
N/A
Silicon Nitride Sputtering Target Specification
Size:
Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
Thickness | 0.125”, 0.25” |
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Properties(Theoretical)
Molecular Weight | 140.28 |
Appearance | Silvery |
Melting Point | N/A |
Boiling Point | N/A |
Density | 2.2 to 3.5 g/cm3 |
Solubility in H2O | N/A |
Electrical Resistivity | 11 to 12 10x Ω-m |
Poisson's Ratio | 0.24 to 0.27 |
Specific Heat | 720 to 800 J/kg-K |
Thermal Conductivity | 12 to 31 W/m-K |
Thermal Expansion | 2.5 to 3.2 µm/m-K |
Young's Modulus | 140 to 310 GPa |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Silicon Nitride Sputtering Target
Silicon nitride sputtering targets are used for CD-ROM, decoration, semiconductor, display, LED and photovoltaic devices, functional coating as nicely as other optical information storage space industry, glass coating industry like car glass and architectural glass, optical communication, etc.
Silicon nitride is one of the most thermodynamically stable technical ceramic material with high hardness as well, silicon nitride ceramic is ideal for bearing parts, especially for those required to work at high speed and high temperature. Silicon nitride has also been used in high-temperature applications, such as rocket engines. It was considered as one of the few monolithic ceramic materials that could survive the severe thermal shock and thermal gradients generated in hydrogen-oxygen rocket engines.
Packing of Silicon Nitride Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’ Silicon Nitride Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
Linear Formula | Si3N4 |
MDL Number | MFCD00011230 |
EC No. | 234-796-8 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | N/A |
IUPAC Name | N/A |
SMILES | N/A |
InchI Identifier | N/A |
InchI Key | N/A |