Product Code : ST-TiC-5N-Cu
Titanium Carbide (TiC) sputtering targets are solid-state compounds used to coat surfaces via sputtering. TiC is a ceramic compound made from titanium and carbon atoms, with a chemical formula of TiC.
Titanium Carbide sputtering targets are used to deposit thin films on various substrates, such as ceramics, metals, and plastics. Sputtering is a physical vapor deposition technique that involves bombarding a target material with high-energy ions to release atoms that can then deposit onto a substrate to form a thin film.
The production of Titanium Carbide sputtering targets involves powder metallurgy processes, where TiC powders are consolidated into a solid material and then shaped into the desired target form, which may include rectangular, circular, or tubular shapes. The target is then subjected to a thorough cleaning process before being placed into a sputtering chamber for use.
Titanium Carbide sputtering targets are used in a wide array of applications due to their excellent mechanical and chemical properties, high temperature stability, and electrical conductivity. They are commonly used in the aerospace and defense industries for coating on aircraft parts, turbine blades, and rocket nozzles. Additionally, Titanium Carbide sputtering targets possess high corrosion resistance, making them ideal for applications involving exposure to harsh environments.
In conclusion, Titanium Carbide sputtering targets are crucial for various applications requiring high-coating quality. Their excellent mechanical and chemical properties and high-temperature stability make them well-suited for use in the aerospace, defense, and energy industries.
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Product Information
Titanium Carbide (TiC) sputtering targets are solid-state compounds used to coat surfaces via sputtering. TiC is a ceramic compound made from titanium and carbon atoms, with a chemical formula of TiC.
Titanium Carbide sputtering targets are used to deposit thin films on various substrates, such as ceramics, metals, and plastics. Sputtering is a physical vapor deposition technique that involves bombarding a target material with high-energy ions to release atoms that can then deposit onto a substrate to form a thin film.
The production of Titanium Carbide sputtering targets involves powder metallurgy processes, where TiC powders are consolidated into a solid material and then shaped into the desired target form, which may include rectangular, circular, or tubular shapes. The target is then subjected to a thorough cleaning process before being placed into a sputtering chamber for use.
Titanium Carbide sputtering targets are used in a wide array of applications due to their excellent mechanical and chemical properties, high temperature stability, and electrical conductivity. They are commonly used in the aerospace and defense industries for coating on aircraft parts, turbine blades, and rocket nozzles. Additionally, Titanium Carbide sputtering targets possess high corrosion resistance, making them ideal for applications involving exposure to harsh environments.
In conclusion, Titanium Carbide sputtering targets are crucial for various applications requiring high-coating quality. Their excellent mechanical and chemical properties and high-temperature stability make them well-suited for use in the aerospace, defense, and energy industries.
Chemical Formula: TiC
Titanium Carbide (TiC) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size:
Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
Thickness | 0.125”, 0.25” |
Porperties(Theoretical)
Compound Formula | N/A |
Molecular Weight | 59.89 |
Appearance | solid |
Melting Point | 3160 °C, 3433 K, 5720 °F |
Boiling Point | 4820 °C, 5093 K, 8708 °F |
Density | 4.93 g/cm3 |
Solubility in H2O | N/A |
Exact Mass | N/A |
Monoisotopic Mass | 63.979248 Da |
Charge | N/A |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Titanium Carbide (TiC) Sputtering Target
Titanium Carbide (TiC) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Titanium Carbide (TiC) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs’Titanium Carbide (TiC) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifier
Linear Formula | TiC |
MDL Number | MFCD00011268 |
EC No. | 235-120-4 |
Beilstein/Reaxys No. | N/A |
Pubchem CID | N/A |
IUPAC Name | N/A |
SMILES | [Ti].C |
InchI Identifier | InChI=1S/CH4.Ti/h1H4; |
InchI Key | TXKRDMUDKYVBLB-UHFFFAOYSA-N |