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Sapphire Wafer

Product Code : EM-AI2O3-NN-CU1

Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation.

ATT manufactures high purity single crystal Sapphire Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. We can offer complete orientation options including C plane, A plane, R plane and M plane.


Please contact us if you need customized services. We will contact you with the price and availability in 24 hours.

Product Product Code Purity Size Contact Us
Sapphire WaferEM-AI2O3-NN-CU1Customized2 in
Sapphire WaferEM-AI2O3-NN-CU2Customized4 in
Sapphire WaferEM-AI2O3-NN-CU3Customized8 in
Sapphire WaferEM-AI2O3-NN-CU4Customized12 in
Sapphire WaferEM-AI2O3-NN-CU5CustomizedCustomized

Product Information


Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.

ATT manufactures high purity single crystal Sapphire Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 300 mm (11.8 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. We can offer complete orientation options including C plane, A plane, R plane and M plane.

Synonyms

Alumina; aluminium oxide; aluminum(III) oxide; aluminium(III) oxide; aloxide; aloxite; alundum; oxo-oxoalumanyloxy-alumane, sapphire; corundum; aluminum trioxide; alumina ceramic; alpha-Corundum; bauxite; Electrocorundum; keto-ketoalumanyloxy-alumane


Sapphire Wafer Specification

OrientationR-plane, C-plane, A-plane, M-plane or a   specified orientation
Orientation Tolerance± 0.3°
Diameter2 inches, 3 inches, 4 inches, 6 inches,   8 inches or others
Diameter Tolerance0.1mm for 2 inches, 0.2mm for 3 inches,   0.3mm for 4 inches, 0.5mm for 6 inches
Thickness0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or   others;
Thickness Tolerance25μm
Primary Flat Length16.0±1.0mm for 2 inches, 22.0±1.0mm for   3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches
Primary Flat OrientationA-plane (1 1-2 0 ) ± 0.2°;  C-plane   (0 0-0 1 ) ± 0.2°,  Projected C-Axis 45 +/- 2°
TTV≤10µm for 2 inches,  ≤15µm for 3   inches,  ≤20µm for 4 inches,  ≤25µm for 6 inches
BOW≤10µm for 2 inches,  ≤15µm for 3   inches,  ≤20µm for 4 inches,  ≤25µm for 6 inches
Front SurfaceEpi-Polished (Ra< 0.3nm for C-plane,   0.5nm for other orientations)
Back SurfaceFine ground (Ra=0.6μm~1.4μm) or   Epi-polished
PackagingPackaged in a class 100 clean room   environment

Per your request or drawing

We can customized as required

Properties(Theoretical)

Compound FormulaAl2O3
Molecular Weight101.96
AppearanceWafer
Melting Point2050 °C (3720 °F)
Boiling Point2,977° C (5,391° F)
Density4.0 g/cm3
Refractive Index1.8
Electrical Resistivity17 10x Ω-m
Poisson's Ratio0.28
Specific Heat760 J Kg-1 K-1 (293K)
Tensile Strength1390 MPa (Ultimate)
Thermal Conductivity30 W/m-K
Thermal Expansion5.3 µm/m-K
Young's Modulus450 GPa
Exact Mass101.948 g/mol
Monoisotopic Mass101.94782 Da


Applications of Sapphire Wafer

High-frequency device
High power device
GaN epitaxy device
High-temperature device
Optoelectronic device
Light-emitting diode

Growth substrate for III-V and II-VI compounds   

Electronics and optoelectronics

IR applications

Silicon On Sapphire Integrated Circuit(SOS)

Radio Frequency Integrated Circuit(RFIC)


Packing of Sapphire Wafer

Standard Packing:

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.

ATTs’ Sapphire Wafer is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.


Chemical Identifiers

Linear FormulaAl2O3
CAS #:1344-28-1
MDL NumberMFCD00003424
EC No.N/A
Beilstein/Reaxys No.N/A
Pubchem CID14769
IUPAC NameOxo(oxoalumanyloxy)alumane
SMILESO=[Al]O[Al]=O
InchI IdentifierInChI=1S/2Al.3O
InchI KeyTWNQGVIAIRXVLR-UHFFFAOYSA-N



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